8 papers
Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards
Albert F. Rigosi Linsey K. Rodenbach, Alireza R. Panna, Shamith U. Payagala +10
Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need…
Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene
Ngoc Thanh Mai Tran, Swapnil M. Mhatre, Cristiane N. Santos +10
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes…
Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices
Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill +6
This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption…
Large-scale five- and seven-junction epitaxial graphene devices
Dinesh Patel, Martina Marzano, Chieh-I Liu +8
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized…
Fabrication of quantum Hall p-n junction checkerboards
Dinesh K. Patel, Martina Marzano, Chieh-I Liu +4
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetr…
Algorithm for constructing customized quantized resistances in graphene junctions
Albert F. Rigosi, Martina Marzano, Antonio Levy +6
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending o…