Andrew M. Armstrong

collaborators

2 papers

physics.app-ph2025

Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer

Yinxuan Zhu, Ashley Wissel-Garcia, Kidus Guye +12

We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and…

physics.app-ph2025

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs

Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6

Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…

Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer

Optical characterization of deep level defects in n-type Alx​Iny​Ga1−x−y​P for development of solid-state photomultiplier analogs

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs