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20042007
most citedHigh Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts

493 citations · 919 across the 7 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2007

Quantum Capacitance Spectroscopy of Single Nanotube Molecules

Yuerui Lu, Ryan Tu, Xinran Wang +2

some errors in equations

cond-mat.mtrl-sci2007★ 67 cited

Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

Ryan Tu, Li Zhang, Yoshio Nishi +1

Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first…

cond-mat.mtrl-sci2006★ 113 cited

Parallel Core-Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High Current Surround Gate Field Effect Transistors

Li Zhang, Ryan Tu, Hongjie Dai

Core-shell germanium nanowire (GeNW) is formed with a single-crystalline Ge core and concentric shells of nitride and silicon passivation layer by chemical vapor deposition (CVD),…

cond-mat.mtrl-sci2005

Deterministic One-to-One Synthesis of Germanium Nanowires and Individual Gold Nano-Seed Patterning for Aligned Nanowire Arrays

Dunwei Wang, Ryan Tu, Li Zhang +1

It is demonstrated by the current work controlled one-to-one synthesis of Ge nanowires (GeNWs) with ~100% yield from Au seed particles. The optimum GeNW growth conditions are found…

cond-mat.mtrl-sci2005★ 493 cited

High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts

Ali Javey, Ryan Tu, Damon Farmer +3

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (AL…