Uddin Bhuiyan

collaborators

8 papers

physics.app-ph2025

Neutron-Assisted Breakdown Enhancement in $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6

This study demonstrates a substantial enhancement of breakdown voltage in $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky diodes through an approach that combines fast neutron irradiation with controlle…

physics.app-ph2025

Quasi-Vertical $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth…

physics.app-ph2025

LPCVD based Plasma Damage Free in situ etching of $I^^{2}$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium

Saleh Ahmed Khan, Ahmed Ibreljic, A F M Anhar Uddin Bhuiyan

This work demonstrates a novel in situ etching technique for $I^^{2}$ -Ga $_{2}$ O $_{3}$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etch…

cond-mat.supr-con2025

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

Stephen Margiotta, Binzhi Liu, Saleh Ahmed Khan +4

In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a…

physics.app-ph2025

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ and $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ )$_…

physics.app-ph2025

Radiation Resilience of $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diodes Under High Dose Gamma Radiation

Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti +1

A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cum…

Neutron-Assisted Breakdown Enhancement in I^2-Ga2​O3​ Schottky Diodes

Quasi-Vertical I^2-Ga2​O3​ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

LPCVD based Plasma Damage Free in situ etching of I^2-Ga2​O3​ using Solid Source Gallium

Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/I^2-Ga2​O3​ and Al2​O3​/I^2-(Alx​Ga1−x​)2​O3​ MOSCAPs

Radiation Resilience of I^2-Ga2​O3​ Schottky Barrier Diodes Under High Dose Gamma Radiation

Neutron-Assisted Breakdown Enhancement in $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes

Quasi-Vertical $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

LPCVD based Plasma Damage Free in situ etching of $I^^{2}$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

Radiation Resilience of $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diodes Under High Dose Gamma Radiation