Rachel Kahler

collaborators

2 papers

cond-mat.mtrl-sci2025

Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3

Rachel Kahler, Carl Peterson, Sriram Krishnamoorthy

We present MOCVD-grown, nitrogen-doped \b{eta}-Ga2O3 films as an insulating buffer layer on Fe-doped (010) \b{eta}-Ga2O3 substrates in lieu of 49% HF treatment to remove unintentio…

physics.app-ph2025

Kilovolt-Class $I^^{2} - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4

We report on the growth optimization of intentionally low-doped ( $1 0^{15}$ $c m^{- 3}$ ) high-quality $I^^{2} - G a_{2} O_{3}$ drift layers up to 10 $I^¼ m$ thick via MOCVD and the fabrication of k…

Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3

Kilovolt-Class I^2−Ga2​O3​ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally 1015 cm−3 Doped Drift Layers

Kilovolt-Class $I^^{2} - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers