2 papers
cond-mat.mtrl-sci2025
Channel-last gate-all-around nanosheet oxide semiconductor transistors
Fabia F. Athena, Xiangjin Wu, Nathaniel S. Safron +18
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performa…
cond-mat.mtrl-sci2024
Direct X-Ray Measurements of Strain in Monolayer MoS from Capping Layers and Geometrical Features
Kathryn Neilson, Marc Jaikissoon, Dante Zakhidov +4
Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how…