Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS

Taeyoung Song, Sanghyun Kang, Yu Hsin Kuo +7

Advanced logic transistors require gate dielectrics that achieve sub-nanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibi…