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cond-mat.mtrl-sci2025
Investigation of resistive switching in Au/MoS2/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations
Ashutosh Krishna Amaram, Saurabh Kharwar, Tarun Kumar Agarwal
In this work, we investigate the underlying physical mechanism for electric-field induced resistive switching in Au/MoS2/Au based memristive devices by combining reactive Molecular…
cond-mat.mtrl-sci2024
Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2
Saurabh Kharwar, Soham Sinha, Tarun Kumar Agarwal
The interface properties between gold (Au) contacts and molybdenum disulfide (MoS2) are critical for optimizing the performance of semiconductor devices. This study investigates th…