4 papers
Synthesis of Group-IV ternary and binary semiconductors using epitaxy of and
Aixin Zhang, Dhruve A. Ringuala, Matthew A. Mircovich +3
alloys were grown on Ge buffer layers at ultra-low temperature using reactions of and for the first time. The latter is…
A practical theoretical model for Ge-like epitaxial diodes: I. The I-V characteristics
Matthew A. Mircovich, John Kouvetakis, José Menéndez
A practical quantitative model is presented to account for the I-V characteristics of pin diodes based on epitaxial Ge-like materials. The model can be used to quantify how the dif…
Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge
José Menéndez, Chi Xu, John Kouvetakis
A consistent methodology is presented to extract carrier concentrations in n-type Ge from measurements of the infrared dielectric function and the Hall effect. In the case of the o…
Compositional dependence of the direct and indirect band gaps in alloys from room temperature photoluminescence
L. Jiang, J. D. Gallagher, C. L. Senaratne +4
The compositional dependence of the lowest direct and indirect band gaps in has been determined from room-temperature photoluminescence measurements.…