Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3$\times$3)-3C-SiC($\bar{\text{1}}\bar{\text{1}}\bar{\text{1}}$) reconstruction

Lydia Nemec, Florian Lazarevic, Patrick Rinke +2

We address the stability of the surface phases that occur on the C-side of 3C-SiC($\bar{1}\bar{1}\bar{1}$) at the onset of graphene formation. In this growth range, experimental…