most citedHigh-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

2 citations · 2 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2014★ 2 cited

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

Lingming Yang, Kausik Majumdar, Yuchen Du +8

In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (name…