4 papers · 1 filter
Revealing the Partially Coherent Nature of Transport in IGZO
Ying Zhao, Michiel J. van Setten, Anastasiia Kruv +10
Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced c…
Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation
K. Vishwakarma, K. Lee, A. Kruv +8
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demon…
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
A. Kruv, M. J. van Setten, A. Chasin +12
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…
Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Jerome Mitard, Luka Kljucar, Nouredine Rassoul +19
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is cha…