Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Hee Sung Lee, Seung Su Baik, Sung-Wook Min +7

Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semicond…