2 papers
cond-mat.mes-hall2026
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
Yu-Hsin Chen, Thai-Son Nguyen, Isabel Streicher +4
AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron tran…
cond-mat.mtrl-sci2025
Chemical Vapor Deposition of Nitrides by Carbon-free Brominated Precursors
Stefano Leone, Teresa Duarte, Hanspeter Menner +6
The epitaxial growth of group 13-nitride semiconductors (GaN, AlN, and AlGaN alloys) for the mass production and fabrication of high-frequency and high-power devices relies on meta…