Epitaxial high-K AlBN barrier GaN HEMTs

Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto +8

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize u…