Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate (CuSCN) and Defect-Healing by I${}_2$ Doping

Pimpisut Worakajit, Pinit Kidkhunthod, Saran Waiprasoet +4

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the dev…