307 citations · 509 across the 6 of their papers we have counts for
5 papers · 1 filter
Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon
Clemens J. Foerst, Christopher R. Ashman, Karlheinz Schwarz +1
The replacement of SiO2 by so-called high-k oxides is one of the major challenges for the semiconductor industry to date. Based on electronic structure calculations and ab-initio m…
The chemistry of La on the Si(001) surface
Christopher R. Ashman, Clemens J. Foerst, Karlheinz Schwarz +1
This paper reports state-of-the-art electronic structure calculations of La adsorption on the Si(001) surface. We predict La chains in the low coverage limit, which condense in a s…
The interface between silicon and a high-k oxide
Clemens J. Foerst, Christopher R. Ashman, Karlheinz Schwarz +1
The ability to follow Moore's Law has been the basis of the tremendous success of the semiconductor industry in the past decades. To date, the greatest challenge for device scaling…
Metallic "Ferroelectricity" in the Pyrochlore Cd2Re2O7
I. A. Sergienko, V. Keppens, M. McGuire +8
A class of materials known as ``ferroelectric metals'' was discussed theoretically by Anderson and Blount in 1965 [Phys. Rev. Lett. 14, 217 (1965)], but to date no examples of this…
Heteroepitaxial growth of high-K gate oxides on silicon: insights from first-principles calculations on Zr on Si(001)
Clemens J. Foerst, Peter E. Bloechl, Karlheinz Schwarz
Metal deposition of Zr an a Si(001) surface has been studied by state-of-the-art electronic structure calculations. The energy per Zr adatom as a function of the coverage shows, th…