307 citations · 398 across the 4 of their papers we have counts for
3 papers · 1 filter
Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon
Clemens J. Foerst, Christopher R. Ashman, Karlheinz Schwarz +1
The replacement of SiO2 by so-called high-k oxides is one of the major challenges for the semiconductor industry to date. Based on electronic structure calculations and ab-initio m…
The chemistry of La on the Si(001) surface
Christopher R. Ashman, Clemens J. Foerst, Karlheinz Schwarz +1
This paper reports state-of-the-art electronic structure calculations of La adsorption on the Si(001) surface. We predict La chains in the low coverage limit, which condense in a s…
The interface between silicon and a high-k oxide
Clemens J. Foerst, Christopher R. Ashman, Karlheinz Schwarz +1
The ability to follow Moore's Law has been the basis of the tremendous success of the semiconductor industry in the past decades. To date, the greatest challenge for device scaling…