most citedSurface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

316 citations · 411 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2016

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

André Dankert, Saroj P. Dash

Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts s…

cond-mat.mes-hall20146 cited

Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications

M. Venkata Kamalakar, B. N Madhushankar, André Dankert +1

Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior…

cond-mat.mes-hall2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

M. Venkata Kamalakar, André Dankert, Johan Bergsten +2

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron n…

cond-mat.mes-hall2014316 cited

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

Anand P. S. Gaur, Satyaprakash Sahoo, Majid Ahmadi +3

MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-elect…

cond-mat.mtrl-sci201489 cited

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

André Dankert, Ravi S. Dulal, Saroj P. Dash

Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate la…