6 citations · 6 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2014★ 6 cited
Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications
M. Venkata Kamalakar, B. N Madhushankar, André Dankert +1
Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior…
cond-mat.mes-hall2014
Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride
M. Venkata Kamalakar, André Dankert, Johan Bergsten +2
The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron n…