activity
19982026
most citedField-Induced Resistive Switching in Metal-Oxide Interfaces

250 citations · 1.2k across the 80 of their papers we have counts for

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Showing 2023Show all

6 papers · 1 filter

q-bio.BM2023

Decoding the Molecular Universe -- Workshop Report

Thomas O. Metz, Joshua N. Adkins, Peter B. Armentrout +30

On August 9-10, 2023, a workshop was convened at the Pacific Northwest National Laboratory (PNNL) in Richland, WA that brought together a group of internationally recognized expert…

physics.chem-ph2023

Revealing Local Field Effects at the Electrical Double Layer with Efficient Open Boundary Simulations under Potential Control

Margherita Buraschi, Andrew P. Horsfield, Clotilde S. Cucinotta

A major challenge in modelling interfacial processes in electrochemical (EC) devices is performing simulations at constant potential. This requires an open-boundary description of…

cond-mat.str-el2023★ 2 cited

Dominant role of charge ordering on high harmonic generation in Pr_{0.6}Ca_{0.4}MnO_{3}

A. Nakano, K. Uchida, Y. Tomioka +3

High-harmonic generation (HHG) is a typical high-order nonlinear optical phenomenon and can be used to probe electronic structures of solids. Here, we investigate the temperature d…

nucl-ex2023★ 9 cited

Cross Section Measurement of the Kr(p,)Rb Reaction in Inverse Kinematics

A. Tsantiri, A. Palmisano-Kyle, A. Spyrou +16

The total cross section of the Kr(p,)Rb reaction was measured for the first time at effective center-of-mass energies between 2.4 and 3.0 MeV, within the relevant…

cond-mat.str-el2023★ 1 cited

Formation of a simple cubic antiferromagnet through charge ordering in a double Dirac material

T. Berry, V. C. Morano, T. Halloran +13

The appearance of spontaneous charge order in chemical systems is often associated with the emergence of novel, and useful, properties. Here we show through single crystal diffract…

cond-mat.mtrl-sci2023★ 2 cited

Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2

Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi +11

Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic ci…