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Haozhe Yang

3 papers hereh-index 592 citations8 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author2

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3
same name
  • Haozhe Yang — 2 papers, h 1

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20242026
collaborators

3 papers

cond-mat.mes-hall2026

Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures

Zhendong Chi, Eoin Dolan, Haozhe Yang +4

Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in sp…

cond-mat.mes-hall2025

Gate tunable spin-charge interconversion in a graphene/ReS2​ heterostructure up to room temperature

Eoin Dolan, Zhendong Chi, Haozhe Yang +2

Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin cur…

cond-mat.mes-hall2024

Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures

Haozhe Yang, Zhendong Chi, Garen Avedissian +7

Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance s…

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