4 papers
Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures
Zhendong Chi, Eoin Dolan, Haozhe Yang +4
Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in sp…
Comments on the formula to extract current-induced torques from the harmonic Hall voltage measurements
Yong-Chang Lau, Yukihiro Marui, Zhendong Chi +2
We examine the formulas commonly used to estimate current-induced spin-orbit torques from harmonic Hall voltage measurements. In particular, we focus on the factor of two discrepan…
Gate tunable spin-charge interconversion in a graphene/ReS heterostructure up to room temperature
Eoin Dolan, Zhendong Chi, Haozhe Yang +2
Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin cur…
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Haozhe Yang, Zhendong Chi, Garen Avedissian +7
Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance s…