most citedHigh-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

40 citations · 45 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2024★ 40 cited

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

J. K. Zettler, C. Hauswald, P. Corfdir +5

In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…

cond-mat.mes-hall2016★ 5 cited

Crystal-phase quantum dots in GaN quantum wires

P. Corfdir, C. Hauswald, O. Marquardt +6

We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy.…