2 papers
cond-mat.mes-hall2026
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
Jingrui Ma, Yuan Kang, Rui Wu +11
Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior…
cond-mat.mes-hall2024
A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
Ming Ni, Rong-Long Ma, Zhen-Zhen Kong +11
To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. Howeve…