2 papers
cond-mat.mes-hall2026
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
Jingrui Ma, Yuan Kang, Rui Wu +11
Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior…
cond-mat.supr-con2025
Spontaneous rotational symmetry breaking induced by electronic instability in the normal state of La_{1-x} Sr_{x} NiO_{2}
Qiang Zhao, Rui Liu, Wen-Long Yang +14
The spontaneous rotational symmetry breaking (RSB), a hallmark phenomenon in cuprate and iron-based high-temperature superconductors, is believed to intimately connected to superco…