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quant-ph2024
Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation
Zhen-Xuan He, Ji-Yang Zhou, Wu-Xi Lin +13
Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during opti…
quant-ph2014★ 99 cited
High-Sensitivity Temperature Sensing Using an Implanted Single Nitrogen-Vacancy Center Array in Diamond
Junfeng Wang, Fupan Feng, Jian Zhang +11
We presented a high-sensitivity temperature detection using an implanted single Nitrogen-Vacancy center array in diamond. The high-order Thermal Carr-Purcell-Meiboom-Gill (TCPMG) m…