Evan M. Anderson

works on

band gap problem 1 defect calculations 1 density functional theory 1 narrow-gap semiconductors 1 occupation constraints 1

From the 1 of 2 linked papers with an AI index.

collaborators

2 papers

cond-mat.mtrl-sci2026

No band gap, no problem: Defects in InAs using a band-avoiding occupation-constrained density functional theory

Peter A. Schultz, Arthur H. Edwards, Evan M. Anderson +2

The paper introduces a band-avoiding occupation-constrained DFT method that avoids spurious band-edge occupations, allowing accurate defect level calculations in narrow-gap semicon…

cond-mat.mtrl-sci2026

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon

Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1

Silicon can be heavily doped with phosphorus in a single atomic layer (a $I^´$ layer), significantly altering the electronic structure of the conduction bands within the material. R…

No band gap, no problem: Defects in InAs using a band-avoiding occupation-constrained density functional theory

First principles band structure of interacting phosphorus and boron/aluminum I^´-doped layers in silicon

First principles band structure of interacting phosphorus and boron/aluminum $I^´$ -doped layers in silicon