activity
20022023
most citedStrain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

128 citations · 452 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2023★ 26 cited

Atomic resolution interface structure and vertical current injection in highly uniform heterojunctions with bulk GaN

F. Giannazzo, S. E. Panasci, E. Schilirò +11

The integration of two-dimensional with recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies hav…

cond-mat.mtrl-sci2023★ 27 cited

Direct atomic layer deposition of ultra-thin and films on gold-supported monolayer

E. Schilirò, S. E. Panasci, A. M. Mio +9

In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of and on Au-supported monolayer (1L) is investigated, providing an i…

cond-mat.mtrl-sci2021★ 37 cited

Substrate impact on the thickness dependence of vibrational and optical properties of large area produced by gold-assisted exfoliation

S. E. Panasci, E. Schilirò, F. Migliore +5

The gold-assisted exfoliation is a very effective method to produce large-area (-scale) membranes of molybdenum disulfide () for electronics. However, the strong $MoS_…

physics.app-ph2021

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer exfoliated on gold: the role of the substrate

Emanuela Schilirò, Raffaella Lo Nigro, Salvatore E. Panasci +5

In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 °C of highly homogeneous and ultra-thin ( 3.6 nm) films with excellent insu…

cond-mat.mtrl-sci2021★ 128 cited

Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

S. E. Panasci, E. Schilirò, G. Greco +5

Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excelle…

cond-mat.mtrl-sci2020★ 11 cited

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

F. Giannazzo, R. Dagher, E. Schilirò +8

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…