261 citations · 3k across the 82 of their papers we have counts for
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InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A
V. S. Kunnathully, T. Riedl, A. Trapp +3
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxatio…
Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V. S. Kunnathully, A. Trapp +3
We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular be…
The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures
E. J. Koop, M. J. Iqbal, F. Limbach +6
Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied h…
Temperature induced spin coherence dissipation in quantum dots
F. G. G. Hernandez, A. Greilich, F. Brito +5
The temperature dependence of electron spin coherence in singly negatively charged (In,Ga)As/GaAs quantum dots is studied by time-resolved Faraday rotation. The decoherence time T2…