277 citations · 1.2k across the 24 of their papers we have counts for
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Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface
Fangfei Ming, Tyler S. Smith, Steven Johnston +2
Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkabl…
Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback
Stephen Jesse, Bethany M. Hudak, Eva Zarkadoula +9
Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devic…
Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces
Seho Yi, Fangfei Ming, Ying-Tzu Huang +8
The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunn…
Realization of a hole-doped Mott insulator on a triangular silicon lattice
Fangfei Ming, Steve Johnston, Daniel Mulugeta +6
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-res…