activity
19982005
most citedThe Kondo effect in C single-molecule transistors

360 citations · 1.2k across the 12 of their papers we have counts for

collaborators
Showing 2004Show all

6 papers · 1 filter

cond-mat.dis-nn200493 cited

Nonlinear charge injection in organic field-effect transistors

B. H. Hamadani, D. Natelson

Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range.…

cond-mat.mes-hall200416 cited

Time-dependent universal conductance fluctuations and coherence in AuPd and Ag

A. Trionfi, S. Lee, D. Natelson

Quantum transport phenomena allow experimental assessment of the phase coherence information in metals. We report quantitative comparisons of coherence lengths inferred from weak l…

cond-mat.mes-hall200412 cited

Quantum coherence in a ferromagnetic metal: time-dependent conductance fluctuations

S. Lee, A. Trionfi, D. Natelson

Quantum coherence of electrons in ferromagnetic metals is difficult to assess experimentally. We report the first measurements of time-dependent universal conductance fluctuations…

cond-mat.mes-hall2004319 cited

Inelastic electron tunneling via molecular vibrations in single-molecule transistors

L. H. Yu, Z. K. Keane, J. W. Ciszek +4

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infra…

cond-mat.mes-hall200418 cited

Electronic coherence in metals: comparing weak localization and time-dependent conductance fluctuations

A. Trionfi, S. Lee, D. Natelson

Quantum corrections to the conductivity allow experimental assessment of electronic coherence in metals. We consider whether independent measurements of different corrections are q…

cond-mat.mes-hall200442 cited

Transport in single-molecule transistors: Kondo physics and negative differential resistance

L. H. Yu, D. Natelson

We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C-based devices, an…