Growth and Morphology of InN Nanowires on Si<111> and Si<100> at Back-End-Of-Line Compatible Temperatures

Andrea Orlando-cunnac, Arthur Arnaud, Martien Den Hertog +4

InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budge…