2 papers
cond-mat.mtrl-sci2026
Mobile charges in MoS2/high-k oxide transistors: from abnormal instabilities to memory-like dynamics
Shaokai Zhou, Haihui Cai, Yehao Wu +6
MoS field-effect transistors (FETs) with high-\textit{k} oxides currently lag behind silicon standards in bias and temperature stability due to ubiquitous border oxide traps th…
cond-mat.mtrl-sci2025
Mapping diverse hysteresis dynamics in scaled MoS FETs using the universal method derived from TCAD modeling
Yezhu Lv, Haihui Cai, Yehao Wu +1
Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a…