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physics.app-ph2026
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
B. Orfao, M. Abou Daher, H. Bouillaud +5
In this work, we analyse the reverse current mechanisms in GaN Schottky barrier diodes (SBDs) grown on sapphire and native GaN substrates. For the sapphire-substrate sample, two co…
physics.app-ph2025
Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
M. Dub, P. Sai, Y. Ivonyak +3
Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crysta…