2 papers
cond-mat.mtrl-sci2017
Morphological characterization of Ge ion implanted SiO2 matrix using multifractal technique
R. P. Yadav, V. Baranwal, Sunil Kumar +2
200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energy were implanted into SiO2 matrix with Different fluences. The implanted samples were annealed at 950 C…
cond-mat.mtrl-sci2005
Ion Beam Synthesis of embedded SiC
Y. S. Katharria, V. BAranwal, D. C. Agarwal +4
The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperat…