4 papers
Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tuneable response time
Ajoy Biswas, Amandeep Kaur, Bhabani Prasad Sahu +5
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) β-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-Ga…
CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications
Umakanta Patra, Subhrajit Sikdar, Roshan Padhan +3
Demand for lower computing power has rapidly increased. In this context, brain-inspired neuromorphic computing, which integrate data storage and processing, has attracted significa…
Spontaneous growth of perfectly circular domains of MoS2 monolayers using chemical vapour deposition technique
Umakanta Patra, Subhabrata Dhar
Very large-scale integration of devices in a circular pattern has several advantages over the commonly used rectangular grid layout. For the development of such integrated circuits…
Controlled Growth of large area bilayer MoS films on SiO substrates by chemical vapour deposition technique
Umakanta Patra, Faiha Mujeeb, Abhiram K +2
Bilayer (2L) transition metal dichalcogenides (TMD) have the ability to host interlayer excitons, where electron and hole parts are spatially separated that leads to much longer li…