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Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
Eduardo V. Castro, K. S. Novoselov, S. V. Morozov +6
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements o…
Retardation effects in the Holstein-Hubbard chain at half-filling
Ka-Ming Tam, S. -W. Tsai, D. K. Campbell +1
The ground state phase diagram of the half-filled one-dimensional Holstein-Hubbard model contains a charge-density-wave (CDW) phase, driven by the electron-phonon (e-ph) coupling,…
Transmission through a biased graphene bilayer barrier
Johan Nilsson, A. H. Castro Neto, F. Guinea +1
We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between bot…
Electronic states and Landau levels in graphene stacks
F. Guinea, A. H. Castro Neto, N. M. R. Peres
We analyze, within a minimal model that allows analytical calculations, the electronic structure and Landau levels of graphene multi-layers with different stacking orders. We find,…
Dirac Fermion Confinement in Graphene
N. M. R. Peres, A. H. Castro Neto, F. Guinea
We study the problem of Dirac fermion confinement in graphene in the presence of a perpendicular magnetic field B. We show, analytically and numerically, that confinement leads to…
Phase Diagram of the Holstein-Hubbard Two-Leg Ladder
Ka-Ming Tam, S. -W. Tsai, D. K. Campbell +1
Using a functional renormalization group method, we obtain the phase diagram of the two-leg ladder system within the Holstein-Hubbard model, which includes both electron-electron a…