ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures

Nashrah Afroze, Jihoon Choi, Salma Soliman +10

Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-l…