From the 1 of 10 linked papers with an AI index.
10 papers
Temperature-doping phase diagram and endurance in Ce-doped HfO2
Amit Kumar Shah, Haidong Lu, Kawshan Hathurusingha +2
The paper studies how adding cerium to ultrathin HfO2 films changes their crystal phases, ferroelectric polarization, and cycling endurance, establishing a temperature‑doping phase…
Multiferroicity in the two-dimensional limit in hexagonal LuFeO3 films
Huilin Lai, Junyu Tan, Jinfeng Zhai +15
Multiferroic oxides, which combine coupled ferroelectric and magnetic orders, are central to understanding correlated quantum phenomena. Yet, as thickness approaches the two-dimens…
Persistent Interfacial Topological Hall Effect Demonstrating Electrical Readout of Topological Spin Structures in Insulators
Jing Li, Huilin Lai, Andrew H. Comstock +12
Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (…
Proton-Transfer Ferroelectrics with Exceptional Switching Endurance
Bibek Tiwari, Yuanyuan Ni, Xiaoshan Xu
Reliable organic ferroelectrics for memory applications require extreme endurance under repeated electrical switching. Here we demonstrate exceptional fatigue resistance in highly…
Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia
Jian Huang, Gwan Yeong Jung, Pravan Omprakash +6
Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the po…
Antiferroelectric Hafnia Down to the 2D Limit
Xin Li, Guodong Ren, Haidong Lu +16
Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for ene…