48 citations · 152 across the 5 of their papers we have counts for
5 papers
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Mattia Musolino, Abbes Tahraoui, Friederich Limbach +5
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by mol…
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S. Fernández-Garrido, V. M. Kaganer, C. Hauswald +5
We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the…
Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
Christian Hauswald, Pierre Corfdir, Johannes K. Zettler +9
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both…