most citedCompatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

32 citations · 32 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2014★ 32 cited

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4

AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…