Local Semiconducting Transition in Armchair Carbon Nanotubes: The Effect of Periodic Bi-site Perturbation on Electronic and Transport Properties of Carbon Nanotubes

M. J. Hashemi, K. Sääskilahti, M. J. Puska

In carbon nanotubes, the most abundant defects, caused for example by irradiation or chemisorption treatments, are small perturbing clusters, i.e. bi-site defects, extending over b…