8 papers
Hydrogen at GaN(0001) surface control of Fermi level pinning: Mg activation of p-type conductivity -- Nakamura process deciphered
Konrad Sakowski, Pawel Strak, Pawel Kempisty +2
Ab initio calculations were used to disentangle the mystery of Nakamura activation of p-type in Mg doped MOVPE grown gallium nitride, the key process leading to the 2014 Nobel Priz…
Role of quasi-Fermi levels in Si- and Mg-related optical absorption in nitride laser diodes (LDs): material context
Konrad Sakowski, Cyprian Sobczak, Pawel Strak +5
Optical absorption and reabsorption of light emitted from active regions in nitride laser diodes (LDs) have been shown to reduce the light extraction efficiency of these devices. I…
Twin Domains in 111 oriented {CdO/MgO} superlattices: homoepitaxy versus heteroepitaxy
Ewa Przeździecka, Aleksandra Wierzbicka, Abinash Adhikari +1
The structural properties of (111)-oriented {CdO/MgO} superlattice structures grown on c-sapphire and cubic MgO substrates have been studied by high resolution X-ray diffraction. T…
Charge control of semiconductor surfaces as elucidated by ab initio calculations a review
StanisÅaw Krukowski, Pawel Kempisty, Pawel Strak
Recent progress in the investigations of the charge role in semiconductor surfaces is reviewed.
Fundamentals of the metal contact to p-type GaN: new multilayer design
Konrad Sakowski, PaweÅ Strak, Stanislaw Krukowski
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact elec…
Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
Aleksandra Wierzbicka, Agata Kaminska, Kamil Sobczak +5
Series of GaN/AlN superlattices (SLs) with various periods and the same thicknesses of GaN quantum wells and AlN barriers have been investigated. X-ray diffraction, photoluminescen…