3 papers
cond-mat.mtrl-sci2026
Hydrogen at GaN(0001) surface control of Fermi level pinning: Mg activation of p-type conductivity -- Nakamura process deciphered
Konrad Sakowski, Pawel Strak, Pawel Kempisty +2
Ab initio calculations were used to disentangle the mystery of Nakamura activation of p-type in Mg doped MOVPE grown gallium nitride, the key process leading to the 2014 Nobel Priz…
cond-mat.mtrl-sci2026
Role of quasi-Fermi levels in Si- and Mg-related optical absorption in nitride laser diodes (LDs): material context
Konrad Sakowski, Cyprian Sobczak, Pawel Strak +5
Optical absorption and reabsorption of light emitted from active regions in nitride laser diodes (LDs) have been shown to reduce the light extraction efficiency of these devices. I…
cond-mat.mtrl-sci2025
Fundamentals of the metal contact to p-type GaN: new multilayer design
Konrad Sakowski, PaweÅ Strak, Stanislaw Krukowski
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact elec…