In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures

I. L. Drichko, V. A. Malysh, I. Yu. Smirnov +6

The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10${}^{11}$cm${}^{-2}$ was measured by…