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Eric A. Stach

4 papers hereh-index 556 citations11 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3
  • physics.app-ph1
same name
  • Eric A. Stach — 2 papers, h 3
  • Eric A. Stach — 1 paper, h 5

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

4 papers

cond-mat.mtrl-sci2026

Evolution of electronic and magnetic properties in Mn- and Co-alloyed ferromagnetic kagome metal Fe3Sn2

Prajwal M. Laxmeesha, Rajesh Dutta, Rajeev Kumar Rai +14

Kagome metals are an intriguing class of quantum materials as the presence of both flat bands and Dirac points provides access to functional properties present in strongly correlat…

cond-mat.mtrl-sci2025

Low-Field Ferroelectricity in 10 nm AlBScN Thin Films

Xiaolei Tong, Pedram Yousefian, Ziyi Wang +5

Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scali…

cond-mat.mtrl-sci2025

Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode

Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves +4

Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 an…

physics.app-ph2025

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7

The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…

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