most citedHigh Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

481 citations · 509 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2014★ 28 cited

Fabrication and Characterization of an Amperometric Glucose Sensor on a Flexible Polyimide Substrate

Xiaosong Du, Christopher J. Durgan, David J. Matthews +10

This study details the use of printing and other additive processes to fabricate a novel amperometric glucose sensor. The sensor was fabricated using a Au coated 12.7 micron polyim…

cond-mat.mtrl-sci2014★ 481 cited

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…