3 papers
cond-mat.mtrl-sci2026
Indium selenides for next-generation low-power computing devices
Seunguk Song, Michael Altvater, Wonchan Lee +3
As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technol…
cond-mat.mes-hall2025
Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays
Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan +12
We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizi…
cond-mat.mtrl-sci2025
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…