458 citations · 1.7k across the 12 of their papers we have counts for
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cond-mat.mes-hall2006★ 178 cited
The insulator/Chern-insulator transition in the Haldane model
T. Thonhauser, David Vanderbilt
We study the behavior of several physical properties of the Haldane model as the system undergoes its transition from the normal-insulator to the Chern-insulator phase. We find tha…
cond-mat.mtrl-sci2006★ 173 cited
Structural and dielectric properties of amorphous ZrO2 and HfO2
Davide Ceresoli, David Vanderbilt
Zirconia (ZrO2) and hafnia (HfO2) are leading candidates for replacing SiO2 as the gate insulator in CMOS technology. Amorphous versions of these materials (a-ZrO2 and a-HfO2)) can…
cond-mat.mtrl-sci2006★ 214 cited
Importance of second-order piezoelectric effects in zincblende semiconductors
Gabriel Bester, Xifan Wu, David Vanderbilt +1
We show that the piezoelectric effect that describes the emergence of an electric field in response to a crystal deformation in III-V semiconductors such as GaAs and InAs has stron…